Are Reference Material for the Final. the Investigator Meant Only to Include First Pages Semiconductor Heterostructures and New Forms of Devices
نویسنده
چکیده
A new switching mechanism in a two-terminal semiconductor heterolayer structure Is proposed which capitalizes on non-linear electron temperature effects in adjacent heterolayers. The estimated switching speed of an optimized heterostructure hot electron diode should be extremely fast, perhaps as fast as 200 femtoseconds. Data are presented on prototype devices which show the expected negative differential resistance and indicate that the basic physical model is correct.
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تاریخ انتشار 2014